2 rohm is leading the indusry by making the smallest 0.5a/30v diodes. these are most suitable for small and light applications. 0.001 0.01 0.1 1 0.1 0.2 0.3 0.4 0.5 0.6 vf(v) if(a) if-vf rb551v - 30 product feature 1. super low vf 0.5a and 0.39v 2. small package umd2(sod323) 3. io=0.5a formerly competitor's this can be used. how small it is? type.typ.(taping) rb551v-30(te-17) package i o /vrm vf(at if) umd2 (sod323) 0.5a/30v 0.42v typ (0.5a) ultra low vf-reduction of batter consumption in portable products. compact and light- sot323: 0.7a/sc59: 1.0a ?high power-0.7 to 1a in these small packages. type.(taping) rb461f(t106) rb491d(t146) package i o /vrm vf(at if) umd3 (sot323) 0.7a/25v 1.0a/25v 0.43v typ (0.7a) smd3 (sc59) 0.40v typ (1.0a) applicatio n example pc, pda, cellular, phone, phs vf(v) if(a) if-vf rb461f rb491d competitor 0.001 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 1 vf can be reduced by almost 0.1v compared to the competitor! rohm developed a 1 5a schottky battier diode in an ultra small package. (actual size ) ideal for miniturizing as well as saving energy type.(taping) rb161l-40(te25) rb051l-40(te25) rb081l-20(te25) package i o /vrm vf(at if) pmds (sma) 1a/40v 3a/40v 5a/25v 0.35v typ(1a) 0.35v typ(3a) 0.35v typ(5a) applicatio n example portable pc, battery, charger, small, power, supply vf(v) if(a) if-vf 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.1 1 10 rb081l - 20 rb161l - 40 rb051l - 40 1.25 1.7 0.7 2.9 1.6 1.1 1.7mm 1.25mm size height: 0.7 mm (2.12mm 2 ) 2.9mm 1.6mm size (4.64mm 2 ) 2.0mm 1.25mm size(2.50mm 2 ) 2.9mm 1.6mm size(4.64mm 2 ) 4.5mm 2.6mm size(11.70mm 2 ) volume about 1/4 type. rb551v-30 type. rb461f type. rb461d conventional 0.5a class roduct. conventional 0.5a class roduct. height: 1.1 mm height: 0.9 mm height: 2.0 mm 1.25 1.6 2.6 2.0 2.9 4.5 0.9 1.1 2.0 compact 2.6 4.5 2.0 10.0 4.6 4.0 7.0 package size is reduced down to less than a half. the best new products will join rohm's "super low vf series" small low vf series schottky barrier diodes height: 1.1 mm
3 schottky barrier diode (silicon epitaxial planer) rb551v-30 application high speed switching feature small mold type (umd2) low vf high reliability mass per piece 3mg/pcs absolute maximum rating (ta=25 c) dimension (unit:mm) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) forward current(dc) forward current surge peak(60hz? ) junction temperature storage temperature vrm vr i o ifsm tj tstg 30v 20v 0.5a 2a 125 c 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf1 vf2 ir test condition if=100ma if=500ma vr=20v standard 0.36v max. 0.47v max. 100 a max. schottky barrier diode (silicon epitaxial planer) rb461f application general rectification feature small mold type (umd3) high reliability mass per piece 6mg/pcs absolute maximum rating (ta=25 c) dimension (unit:mm) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) forward current(dc) forward current surge peak(60hz? ) junction temperature storage temperature vrm vr if ifsm tj tstg 25v 20v 0.7a 3a 125 c 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf ir test condition if=700ma vr=20v standard 0.49v max. 200 a max. electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf ir test condition if=1.0a vr=20v standard 0.45v max. 200 a max. schottky barrier diode (silicon epitaxial planer) rb491d application general rectification feature small mold type (smd3) high reliability mass per piece 13mg/pcs absolute maximum rating (ta=25 c) dimension (unit:mm) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) forward current(dc) forward current surge peak(60hz? ) junction temperature storage temperature vrm vr if ifsm tj tstg 25v 20v 1.0a 3a 125 c 40 125 c cathode mark 0.3 0.05 0.1 0.05 1.25 0.1 2.5 0.2 1.7 0.1 0.7 0.1 d 3b 0.15 0.05 0.3 0.1 0.9 0.1 1.3 0.1 2.0 0.2 1.25 0.1 2.1 0.1 0.3 0.65 0.65 0.6 0 0.1 0.1min (3)k (2)a (1) (1) (2) (3) (3)k (2)a (1)open 0 0.1 0.3 0.6 0.8 0.1 2.8 0.2 1.9 0.1 2.9 0.2 0.95 0.95 (1) (2) (3) week code 1.1 0.2 0.1 0.4 0.1 0.05 0.15 0.1 0.06 1.6 0.2 0.1 d2e *please pay attention to static electricity when handring. *please pay attention to static electricity when handring. *please pay attention to static electricity when handring. ultra low vf ultra low vf ultra low vf
4 schottky barrier diode (silicon epitaxial planer) rb161l-40 application general rectification feature small power mold type (pmds) high reliability low vf mass per piece 69mg/pcs absolute maximum rating (ta=25 c) dimension (unit:mm) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) forward current(dc) forward current surge peak(60hz? ) junction temperature operation temperature storage temperature vrm vr i o ifsm tj topr tstg 40v 20v 1a 70a 125 c refer to note 1 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf ir test condition if=1a vr=20v standard 0.40v max. 1.0ma max. 1.5 0.2 cathode mark 2.6 0.2 2.0 0.2 4.5 0.2 5.0 0.3 1 2 3 4 0.1 0.02 0.1 1.2 0.3 note.1 derating curve i o -ta 0.0 02550 ambient temperature : ta(c) average rectified foward current : io(a) 75 100 125 0.5 1.0 1.5 2.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine io-ta rb161l-40 glass-epoxy substrate if io tp t d = tp/t vr = vrm/2 rb051l-40 application general rectification feature small power mold type (pmds) high reliability low vf mass per piece 69mg/pcs absolute maximum rating (ta=25 c) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) average rectified forward current * 1 forward current(dc) forward current surge peak(60hz? ) operation temperature storage temperature vrm vr i o if ifsm topr tstg 40v 20v 3.0a 3.0a 70a refer to note 1,2 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf1 vf2 ir1 ir2 test condition if=1.0a if=3.0a vr=20v vr=15v standard 0.35v max. 0.45v max. 1.0ma max. 150 a max. note.1 derating curve i o -ta * 1 60hz sine wave. almina substrate at the time of assembly. tl=90 c max. 60hz? 1.5 0.2 cathode mark 2.6 0.2 2.0 0.2 4.5 0.2 5.0 0.3 1 2 3 4 0.1 0.02 0.1 1.2 0.3 note.2 derating curve i o -ta schottky barrier diode (silicon epitaxial planer) if io tp t d = tp/t vr = vrm/2 if io tp t d = tp/t vr = vrm/2 0.0 02550 ambient temperature : ta(c) average rectified foward current : io(a) 75 100 125 1.0 4.0 3.0 2.0 5.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine io-ta rb051l-40 almina substrate 0.0 02550 lead temperature : tl(c) average rectified foward current : io(a) 75 100 125 1.0 4.0 3.0 2.0 5.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine wave io-tl rb051l-40 rb081l-20 application general rectification feature small power mold type (pmds) high reliability low vf mass per piece 69mg/pcs absolute maximum rating (ta=25 c) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) average rectified forward current * 1 forward current surge peak(60hz? ) junction temperature operation temperature storage temperature vrm vr i o ifsm tj topr tstg 25v 20v 5.0a 70a 125 c refer to note 1,2 40 125 c electrical characteristc (ta=25 c) characteristic forward voltage reverse current symbol vf ir test condition if=5a vr=20v standard 0.45v max. 0.7ma max. note.1 derating curve i o -ta * 1 60hz sine wave. almina substrate at the time of assembly. tc max=90 c note.2 derating curve i o -ta schottky barrier diode (silicon epitaxial planer) 1.5 0.2 cathode mark 2.6 0.2 2.0 0.2 4.5 0.2 5.0 0.3 1 2 3 4 0.1 0.02 0.1 1.2 0.3 0.0 02550 ambient temperature : ta(c) average rectified foward current : io(a) 75 100 125 1.0 4.0 3.0 2.0 6.0 5.0 7.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine io-ta rb081l-20 almina substrate if io tp t d = tp/t vr = vrm/2 0.0 02550 case temperature : tc(c) average rectified foward current : io(a) 75 100 125 2.0 1.0 4.0 3.0 6.0 5.0 8.0 7.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine wave io-tc rb081l-20 almina substrate if io tp t d = tp/t vr = vrm/2 *please pay attention to static electricity when handring. *please pay attention to static electricity when handring. ultra low vf ultra low vf ultra low vf dimension (unit:mm) dimension (unit:mm)
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